BD139

NPN -55°C~150°C TJ 100nA ICBO TO-225AA, TO-126-3 Bulk Through Hole

Manufacturer: ON Semiconductor
Manufacturer's number: BD139
Package: TO-225AA, TO-126-3
Datasheet: -
Stock: 130113
SKU: 1807-BD139
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Details

Tags

Parameters
Lifecycle Status	OBSOLETE (Last Updated: 1 day ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Number of Pins	3
Supplier Device Package	TO-225AA
Collector-Emitter Breakdown Voltage	80V
Current-Collector (Ic) (Max)	1.5A
hFEMin	25
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	80V
Max Power Dissipation	1.25W
Current Rating	1.5A
Base Part Number	BD139
Polarity	NPN
Element Configuration	Single
Power - Max	1.25W
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	500mV
Max Collector Current	1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	80V
Collector Base Voltage (VCBO)	80V
Emitter Base Voltage (VEBO)	5V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

BD139 Description

The ON Semiconductor BD139 BJT is an NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at the ground and will be closed (Forward biased) when a signal is provided to the base pin.BD139 has a gain value of 40 to 160, this value determines the amplification capacity of the transistor.