Cambridge GaN Devices CGD65B200S2-T13

650V GAN HEMT, 200MOHM, DFN5X6.

Manufacturer: Cambridge GaN Devices
Manufacturer's number: Cambridge GaN Devices CGD65B200S2-T13
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4
SKU: CGD65B200S2-T13
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Unit Price: $4.7800

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Details

Parameters
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	-
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	9V, 20V
Rds On (Max) @ Id, Vgs	280mOhm @ 600mA, 12V
Vgs(th) (Max) @ Id	4.2V @ 2.75mA
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 12 V
Vgs (Max)	+20V, -1V
FET Feature	Current Sensing
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (5x6)
Package / Case	8-PowerVDFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

650 V 8.5A (Tc) Surface Mount 8-DFN (5x6)