Parameters |
Mfr |
EPC Space, LLC |
Series |
e-GaN® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
580mOhm @ 1A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 140µA |
Vgs (Max) |
- |
Input Capacitance (Ciss) (Max) @ Vds |
22 pF @ 30 V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
4-SMD |
Package / Case |
4-SMD, No Lead |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
HTSUS |
0000.00.0000 |
Other Names |
4107-EPC7014UBSH |
Standard Package |
1 |
N-Channel 60 V 1A (Tc) Surface Mount 4-SMD