Parameters |
Mfr |
GaNPower |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
8A |
Drive Voltage (Max Rds On, Min Rds On) |
6V |
Vgs(th) (Max) @ Id |
1.4V @ 3.5mA |
Gate Charge (Qg) (Max) @ Vgs |
2.1 nC @ 6 V |
Vgs (Max) |
+7.5V, -12V |
Input Capacitance (Ciss) (Max) @ Vds |
63 pF @ 400 V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
Die |
Package / Case |
Die |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
4025-GPI65008DF56TR |
Standard Package |
1 |
N-Channel 650 V 8A Surface Mount Die