Parameters | |
---|---|
Mfr | GE Aerospace |
Series | SiC Power |
Package | Box |
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 2 N-Channel (Half Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 475A |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V |
Vgs(th) (Max) @ Id | 4.5V @ 160mA |
Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 29300pF @ 600V |
Power - Max | 1250W |
Operating Temperature | -55°C ~ 150°C (Tc) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | - |
Base Product Number | GE12047 |
RoHS Status | RoHS non-compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
REACH Status | REACH Affected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 4014-GE12047CCA3 |
Standard Package | 1 |