GE Aerospace GE12160CEA3

1200V 1425A SiC Half-Bridge

Manufacturer: GE Aerospace
Manufacturer's number: GE Aerospace GE12160CEA3
Package: Bulk
Datasheet: PDF
Stock: 5
SKU: GE12160CEA3
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Unit Price: $3.0000

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Details

Parameters
Mfr	GE Aerospace
Series	SiC Power
Package	Bulk
Product Status	Active
Technology	Silicon Carbide (SiC)
Configuration	2 N-Channel (Half Bridge)
FET Feature	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	1.425kA (Tc)
Rds On (Max) @ Id, Vgs	1.5mOhm @ 475A, 20V
Vgs(th) (Max) @ Id	4.5V @ 480mA
Gate Charge (Qg) (Max) @ Vgs	3744nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds	90000pF @ 600V
Power - Max	3.75kW (Tc)
Operating Temperature	-55°C ~ 150°C (Tc)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	-
Base Product Number	GE12160
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	4014-GE12160CEA3
Standard Package	1

Mosfet Array 1200V (1.2kV) 1.425kA (Tc) 3.75kW (Tc) Chassis Mount