Global Power Technology-GPT G3S06510D

DIODE SIL CARBIDE 650V 34A TO263

Manufacturer: Global Power Technology-GPT
Manufacturer's number: Global Power Technology-GPT G3S06510D
Package: Cut Tape (CT)
Datasheet: PDF
Stock: 1660
SKU: G3S06510D
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $5.3000

Ext Price: $5.3000

Details

Parameters
HTSUS	8541.10.0080
Standard Package	30
Mfr	Global Power Technology-GPT
Series	-
Package	Cut Tape (CT)
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	34A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Capacitance @ Vr, F	690pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263
Operating Temperature - Junction	-55°C ~ 175°C
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH info available upon request
ECCN	EAR99

Diode 650 V 34A Surface Mount TO-263