Global Power Technology-GPT G3S12006B

SIC SCHOTTKY DIODE 1200V 6A 3-PI

Manufacturer: Global Power Technology-GPT
Manufacturer's number: Global Power Technology-GPT G3S12006B
Package: Cut Tape (CT)
Datasheet: PDF
Stock: 7713
SKU: G3S12006B
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Details

Parameters
Mfr	Global Power Technology-GPT
Series	-
Package	Cut Tape (CT)
Product Status	Active
Diode Configuration	1 Pair Common Cathode
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io) (per Diode)	14A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 3 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	100 µA @ 1200 V
Operating Temperature - Junction	-55°C ~ 175°C
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH info available upon request
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	30

Diode Array 1 Pair Common Cathode 1200 V 14A (DC) Through Hole TO-247-3