Parameters |
Mfr |
Inventchip |
Series |
- |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Rds On (Max) @ Id, Vgs |
65mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id |
3.2V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs |
120 nC @ 20 V |
Vgs (Max) |
+20V, -5V |
Input Capacitance (Ciss) (Max) @ Vds |
2750 pF @ 800 V |
FET Feature |
- |
Power Dissipation (Max) |
344W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247-4 |
Package / Case |
TO-247-4 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
4084-IV1Q12050T4 |
Standard Package |
30 |
N-Channel 1200 V 58A (Tc) 344W (Tc) Through Hole TO-247-4