Parameters |
Mfr |
MoSys, Inc. |
Series |
Automotive, AEC-Q100 |
Package |
Tray |
Product Status |
Active |
Memory Type |
Volatile |
Memory Format |
RAM |
Technology |
SRAM, RLDRAM |
Memory Size |
512Mbit |
Memory Organization |
128M x 4 |
Memory Interface |
Parallel |
Write Cycle Time - Word, Page |
- |
Access Time |
3.2 ns |
Voltage - Supply |
- |
Operating Temperature |
- |
Mounting Type |
Surface Mount |
Package / Case |
288-BGA, FCBGA |
Supplier Device Package |
288-FCBGA (19x19) |
Base Product Number |
MSQ220 |
ECCN |
3A991B2B |
HTSUS |
8542.32.0041 |
Other Names |
2331-MSQ220AJC288-10 |
Standard Package |
84 |
SRAM, RLDRAM Memory IC 512Mbit Parallel 3.2 ns 288-FCBGA (19x19)