Parameters |
Mfr |
PN Junction Semiconductor |
Series |
P3M |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
48A |
Drive Voltage (Max Rds On, Min Rds On) |
15V |
Rds On (Max) @ Id, Vgs |
79mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id |
2.4V @ 5mA (Typ) |
Vgs (Max) |
+20V, -8V |
FET Feature |
- |
Power Dissipation (Max) |
188W |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247-4L |
Package / Case |
TO-247-4 |
RoHS Status |
ROHS3 Compliant |
REACH Status |
REACH Affected |
Other Names |
4237-P3M06060K4 |
Standard Package |
1 |
N-Channel 650 V 48A 188W Through Hole TO-247-4L