Renesas Electronics America Inc 2SJ649-AZ

2SJ649-AZ

Manufacturer: Renesas Electronics America Inc
Manufacturer's number: Renesas Electronics America Inc 2SJ649-AZ
Package: Bulk
Datasheet: PDF
Stock: 6936
SKU: 2SJ649-AZ
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Details

Parameters
Mfr	Renesas Electronics America Inc
Series	-
Package	Bulk
Product Status	Last Time Buy
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	48mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 25W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Isolated Tab
Package / Case	TO-220-3 Isolated Tab
Base Product Number	2SJ649
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25

P-Channel 60 V 20A (Tc) 2W (Ta), 25W (Tc) Through Hole TO-220 Isolated Tab