| Parameters |
| Mfr |
Fairchild Semiconductor |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
800 mA |
| Voltage - Collector Emitter Breakdown (Max) |
100 V |
| Vce Saturation (Max) @ Ib, Ic |
1.25V @ 8mA, 800mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
10000 @ 500mA, 5V |
| Power - Max |
1 W |
| Frequency - Transition |
- |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-226 |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
378 |
Bipolar (BJT) Transistor NPN - Darlington 100 V 800 mA 1 W Through Hole TO-226