NTE Electronics, Inc 2N6039
2N6039
- Manufacturer: NTE Electronics, Inc
- Manufacturer's number: NTE Electronics, Inc 2N6039
- Package: Bag
- Datasheet: PDF
- Stock: 9406
- SKU: 2N6039
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | NTE Electronics, Inc |
| Series | - |
| Package | Bag |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Power - Max | 40 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | SOT-32-3 |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 2368-2N6039 |
| Standard Package | 1 |
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole SOT-32-3
More Products
-
NXP USA Inc. BFU580GX
-
NXP USA Inc. BFU590QX
-
Toshiba Semiconductor and Storage RN2904,LF(CT
-
Toshiba Semiconductor and Storage RN4984,LF(CT
-
onsemi SMMBT3906WT1G
-
onsemi SMMBTA06WT3G
-
onsemi SMMBTA14LT3G
-
onsemi SMMBTA56WT3G
-
onsemi SMUN5112DW1T1G
-
onsemi SMUN5115T1G
-
onsemi SMUN5235DW1T3G
-
onsemi SMUN5311DW1T3G
-
Diodes Incorporated FMMT491QTA
-
Diodes Incorporated FMMT591QTA
-
onsemi BD438TG