| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
PNP |
| Current - Collector (Ic) (Max) |
700 mA |
| Voltage - Collector Emitter Breakdown (Max) |
80 V |
| Vce Saturation (Max) @ Ib, Ic |
400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) |
500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 100mA, 3V |
| Power - Max |
750 mW |
| Frequency - Transition |
100MHz |
| Operating Temperature |
135°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
3-SIP |
| Supplier Device Package |
3-SIP |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-NTE14 |
| Standard Package |
1 |
Bipolar (BJT) Transistor PNP 80 V 700 mA 100MHz 750 mW Through Hole 3-SIP