| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
50 mA |
| Voltage - Collector Emitter Breakdown (Max) |
35 V |
| Vce Saturation (Max) @ Ib, Ic |
500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) |
10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 10mA, 10V |
| Power - Max |
600 mW |
| Frequency - Transition |
500MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
3-SIP |
| Supplier Device Package |
3-SIP |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-NTE16001 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 35 V 50 mA 500MHz 600 mW Through Hole 3-SIP