| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 2mA, 1A |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
4000 @ 1A, 5V |
| Power - Max |
1 W |
| Frequency - Transition |
1GHz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 Long Body |
| Supplier Device Package |
TO-92L |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE48 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN - Darlington 50 V 1 A 1GHz 1 W Through Hole TO-92L