| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
17 A |
| Voltage - Collector Emitter Breakdown (Max) |
200 V |
| Vce Saturation (Max) @ Ib, Ic |
2.5V @ 1A, 10A |
| Current - Collector Cutoff (Max) |
100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 8A, 4V |
| Power - Max |
200 W |
| Frequency - Transition |
20MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
3-SIP |
| Supplier Device Package |
3-SIP |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE58 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 200 V 17 A 20MHz 200 W Through Hole 3-SIP