| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
50 mA |
| Voltage - Collector Emitter Breakdown (Max) |
12 V |
| Vce Saturation (Max) @ Ib, Ic |
- |
| Current - Collector Cutoff (Max) |
10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 8mA, 10V |
| Power - Max |
350 mW |
| Frequency - Transition |
600MHz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 Long Body |
| Supplier Device Package |
TO-92 (TO-226) |
| Base Product Number |
MPS356 |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Affected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Standard Package |
6,000 |
Bipolar (BJT) Transistor NPN 12 V 50 mA 600MHz 350 mW Through Hole TO-92 (TO-226)